๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Effect of ion implantation on redistribution of erbium during solid-phase epitaxial crystallization of silicon

โœ Scribed by O. V. Aleksandrov; Yu. A. Nikolaev; N. A. Sobolev

Book ID
110120034
Publisher
Springer
Year
1999
Tongue
English
Weight
94 KB
Volume
33
Category
Article
ISSN
1063-7826

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Phase-field model for the dopant redistr
Phase-field model for the dopant redistribution during solid phase epitaxial regrowth of amorphized silicon
โœ Christoph Zechner; Dmitri Matveev; Axel Erlebach ๐Ÿ“‚ Article ๐Ÿ“… 2004 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 94 KB

Silicon regions amorphized by high dose ion implantation recrystallize under high temperature treatment. Driven by a lower configuration energy of dopant atoms in the amorphized phase than in the crystalline phase, dopant atoms are pushed in the direction of recrystallization during solid phase epit