✦ LIBER ✦

Effect of germanium pre-amorphization on solid-phase epitaxial regrowth of antimony and arsenic ion-implanted silicon

✍ Scribed by Shahram Ghanad Tavakoli; Sungkweon Baek; Hyunsang Hwang

Publisher: Elsevier Science
Year: 2004
Tongue: English
Weight: 161 KB
Volume: 114-115
Category: Article
ISSN: 0921-5107
DOI: 10.1016/j.mseb.2004.07.067

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Effects of electrically active impuritie

Effects of electrically active impurities on the epitaxial regrowth rate of amorphized silicon and germanium

✍ I. Suni; G. Göltz; M.-A. Nicolet; S.S. Lau 📂 Article 📅 1982 🏛 Elsevier Science 🌐 English ⚖ 463 KB

Solid phase epitaxial regrowth of amorph

Solid phase epitaxial regrowth of amorphous layers in silicon created by low energy phosphorus implantation: A medium energy ion scattering study

✍ S. Ruffell; I.V. Mitchell; P.J. Simpson 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 210 KB

Medium energy ion scattering (MEIS) has been used to study the kinetics of solid phase epitaxial regrowth (SPEG) of ultrathin amorphous layers created by room temperature implantation of 5 keV energy phosphorus ions into Si(1 0 0). P ion fluences ranged from 5e14 cm À2 up to 1e16 cm À2 , the associa

5372. The effect of germanium ion implan

5372. The effect of germanium ion implantation dose on the amorphization and recrystallization of polycrystalline silicon films: Y Komem and I W Hall, J Appl Phys, 52 (11), 1981, 6655–6658

📂 Article 📅 1982 🏛 Elsevier Science 🌐 English ⚖ 153 KB