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Effects of electrically active impurities on the epitaxial regrowth rate of amorphized silicon and germanium

✍ Scribed by I. Suni; G. Göltz; M.-A. Nicolet; S.S. Lau


Publisher
Elsevier Science
Year
1982
Tongue
English
Weight
463 KB
Volume
93
Category
Article
ISSN
0040-6090

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