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The effect of growth rate, diameter and impurity concentration on structure in Czochralski silicon crystal growth

โœ Scribed by T.G. Digges Jr.; R. Shima

Publisher
Elsevier Science
Year
1980
Tongue
English
Weight
621 KB
Volume
50
Category
Article
ISSN
0022-0248

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Combined effects of crucible geometry an
Combined effects of crucible geometry and Marangoni convection on silicon Czochralski crystal growth
โœ F. Mokhtari; A. Bouabdallah; M. Zizi; S. Hanchi; A. Alemany ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 944 KB

## Abstract In order to understand the influence of crucible geometry combined with natural convection and Marangoni convection on melt flow pattern, temperature and pressure fields in silicon Czochralski crystal growth process, a set of numerical simulations was conducted. We carry out calculation