Phase-field model for the dopant redistr
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Christoph Zechner; Dmitri Matveev; Axel Erlebach
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Article
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2004
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Elsevier Science
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English
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Silicon regions amorphized by high dose ion implantation recrystallize under high temperature treatment. Driven by a lower configuration energy of dopant atoms in the amorphized phase than in the crystalline phase, dopant atoms are pushed in the direction of recrystallization during solid phase epit