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Solid phase epitaxial regrowth of buried amorphous silicon layers obtained by ion irradiation

✍ Scribed by A.V. Buravlyov; L.Y. Krasnobaev; A.A. Malinin; V.V. Kireiko; V.V. Starkov; A.F. Vyatkin


Book ID
113285388
Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
570 KB
Volume
88
Category
Article
ISSN
0168-583X

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Solid phase epitaxial regrowth of amorph
✍ S. Ruffell; I.V. Mitchell; P.J. Simpson πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 210 KB

Medium energy ion scattering (MEIS) has been used to study the kinetics of solid phase epitaxial regrowth (SPEG) of ultrathin amorphous layers created by room temperature implantation of 5 keV energy phosphorus ions into Si(1 0 0). P ion fluences ranged from 5e14 cm Γ€2 up to 1e16 cm Γ€2 , the associa