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Amorphous–crystalline interface evolution during Solid Phase Epitaxy Regrowth of SiGe films amorphized by ion implantation

✍ Scribed by D. D’Angelo; A.M. Piro; S. Mirabella; C. Bongiorno; L. Romano; A. Terrasi; M.G. Grimaldi


Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
264 KB
Volume
257
Category
Article
ISSN
0168-583X

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Solid phase epitaxial regrowth of amorph
✍ S. Ruffell; I.V. Mitchell; P.J. Simpson 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 210 KB

Medium energy ion scattering (MEIS) has been used to study the kinetics of solid phase epitaxial regrowth (SPEG) of ultrathin amorphous layers created by room temperature implantation of 5 keV energy phosphorus ions into Si(1 0 0). P ion fluences ranged from 5e14 cm À2 up to 1e16 cm À2 , the associa