✦ LIBER ✦

Solid phase epitaxial regrowth of ion-implanted amorphous silicon characterized by differential reflectometry

✍ Scribed by S.W. Feng; R.E. Hummel; D.R. Hagmann

Book ID: 113283672
Publisher: Elsevier Science
Year: 1993
Tongue: English
Weight: 494 KB
Volume: 74
Category: Article
ISSN: 0168-583X
DOI: 10.1016/0168-583x(93)95034-3

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

A study of the solid phase epitaxial reg

A study of the solid phase epitaxial regrowth of amorphous silicon utilizing differential reflectometry

✍ D.R. Hagmann; W. Xi; R.E. Hummel 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 453 KB

Solid phase epitaxial regrowth of buried

Solid phase epitaxial regrowth of buried amorphous silicon layers obtained by ion irradiation

✍ A.V. Buravlyov; L.Y. Krasnobaev; A.A. Malinin; V.V. Kireiko; V.V. Starkov; A.F. 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 570 KB

Investigation of solid phase epitaxial r

Investigation of solid phase epitaxial regrowth on ion-implanted silicon by backscattering spectrometry and ellipsometry

✍ M. Fried; T. Lohner; G. Vizkelethy; E. Jároli; G. Mezey; J. Gyulai 📂 Article 📅 1986 🏛 Elsevier Science 🌐 English ⚖ 284 KB

Amorphous–crystalline interface evolutio

Amorphous–crystalline interface evolution during Solid Phase Epitaxy Regrowth of SiGe films amorphized by ion implantation

✍ D. D’Angelo; A.M. Piro; S. Mirabella; C. Bongiorno; L. Romano; A. Terrasi; M.G. 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 264 KB

Effect of germanium pre-amorphization on

Effect of germanium pre-amorphization on solid-phase epitaxial regrowth of antimony and arsenic ion-implanted silicon

✍ Shahram Ghanad Tavakoli; Sungkweon Baek; Hyunsang Hwang 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 161 KB

Solid phase epitaxial regrowth of amorph

Solid phase epitaxial regrowth of amorphous layers in silicon created by low energy phosphorus implantation: A medium energy ion scattering study

✍ S. Ruffell; I.V. Mitchell; P.J. Simpson 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 210 KB

Medium energy ion scattering (MEIS) has been used to study the kinetics of solid phase epitaxial regrowth (SPEG) of ultrathin amorphous layers created by room temperature implantation of 5 keV energy phosphorus ions into Si(1 0 0). P ion fluences ranged from 5e14 cm À2 up to 1e16 cm À2 , the associa