A study of the solid phase epitaxial regrowth of amorphous silicon utilizing differential reflectometry
โ Scribed by D.R. Hagmann; W. Xi; R.E. Hummel
- Book ID
- 113281510
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 453 KB
- Volume
- 59-60
- Category
- Article
- ISSN
- 0168-583X
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Silicon regions amorphized by high dose ion implantation recrystallize under high temperature treatment. Driven by a lower configuration energy of dopant atoms in the amorphized phase than in the crystalline phase, dopant atoms are pushed in the direction of recrystallization during solid phase epit
Medium energy ion scattering (MEIS) has been used to study the kinetics of solid phase epitaxial regrowth (SPEG) of ultrathin amorphous layers created by room temperature implantation of 5 keV energy phosphorus ions into Si(1 0 0). P ion fluences ranged from 5e14 cm ร2 up to 1e16 cm ร2 , the associa