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Analytical Model for Redistribution Profile of Ion-Implanted Impurities During Solid-Phase Epitaxy

โœ Scribed by Kunihiro Suzuki; Yuji Kataoka; Susumu Nagayama; Charles W. Magee; Temel H. Buyuklimanli; Tsutomu Nagayama

Book ID
114618582
Publisher
IEEE
Year
2007
Tongue
English
Weight
372 KB
Volume
54
Category
Article
ISSN
0018-9383

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Phase-field model for the dopant redistr
Phase-field model for the dopant redistribution during solid phase epitaxial regrowth of amorphized silicon
โœ Christoph Zechner; Dmitri Matveev; Axel Erlebach ๐Ÿ“‚ Article ๐Ÿ“… 2004 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 94 KB

Silicon regions amorphized by high dose ion implantation recrystallize under high temperature treatment. Driven by a lower configuration energy of dopant atoms in the amorphized phase than in the crystalline phase, dopant atoms are pushed in the direction of recrystallization during solid phase epit