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Investigation of oxide thin films deposited by atomic layer deposition as dopant source for ultra-shallow doping of silicon

✍ Scribed by Kalkofen, Bodo; Amusan, Akinwumi A.; Lisker, Marco; Burte, Edmund P.


Book ID
120467822
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
445 KB
Volume
109
Category
Article
ISSN
0167-9317

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Atomic layer deposition of tantalum oxid
✍ A. Lintanf-SalaΓΌn; A. Mantoux; E. Djurado; E. Blanquet πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 573 KB

Atomic Layer Deposition (ALD) was used for the deposition of tantalum oxide thin films in order to be integrated in microelectronic devices as barrier to copper diffusion. The influence of deposition temperature, number of cycles and precursor pulse time on the film growth was discussed. The conform