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Investigation of Au Schottky contacts on GaN grown by molecular beam epitaxy

✍ Scribed by Kribes, Y; Harrison, I; Tuck, B; Cheng, T S; Foxon, C T


Book ID
115479698
Publisher
Institute of Physics
Year
1997
Tongue
English
Weight
119 KB
Volume
12
Category
Article
ISSN
0268-1242

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## Abstract An investigation of InN layers grown on GaN templates by molecular beam epitaxy (MBE) has been carried out by X‐ray diffraction (XRD), Raman spectroscopy (RS) and photoluminescence (PL). A good correlation is noticed between their crystalline quality and optical properties. The best sam