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Low-noise GaN Schottky diodes on Si(111) by molecular beam epitaxy

✍ Scribed by P. W. Deelman; R. N. Bicknell-tassius; S. Nikishin; V. Kuryatkov; H. Temkin

Book ID: 126609158
Publisher: American Institute of Physics
Year: 2001
Tongue: English
Weight: 315 KB
Volume: 78
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1357448

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