✦ LIBER ✦

Mechanism of molecular beam epitaxy growth of GaN nanowires on Si(111)

✍ Scribed by Debnath, R. K.; Meijers, R.; Richter, T.; Stoica, T.; Calarco, R.; Luth, H.

Book ID: 118736528
Publisher: American Institute of Physics
Year: 2007
Tongue: English
Weight: 602 KB
Volume: 90
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2715119

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Nucleation and Growth of GaN Nanowires o

Nucleation and Growth of GaN Nanowires on Si(111) Performed by Molecular Beam Epitaxy

✍ Calarco, Raffaella; Meijers, Ralph J.; Debnath, Ratan K.; Stoica, Toma; Sutter, 📂 Article 📅 2007 🏛 American Chemical Society 🌐 English ⚖ 209 KB

Polarity of GaN nanowires grown by plasm

Polarity of GaN nanowires grown by plasma-assisted molecular beam epitaxy on Si(111)

✍ Hestroffer, Karine; Leclere, Cédric; Bougerol, Catherine; Renevier, Hubert; Daud 📂 Article 📅 2011 🏛 The American Physical Society 🌐 English ⚖ 496 KB

Growth of GaN nanowall network on Si (11

Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy

✍ Aihua Zhong, Kazuhiro Hane 📂 Article 📅 2012 🏛 Springer-Verlag 🌐 English ⚖ 535 KB

Synthesis of aligned GaN nanorods on Si

Synthesis of aligned GaN nanorods on Si (111) by molecular beam epitaxy

✍ Y.H. Kim; J.Y. Lee; S.-H. Lee; J.-E. Oh; H.S. Lee 📂 Article 📅 2005 🏛 Springer 🌐 English ⚖ 773 KB

A growth diagram for plasma-assisted mol

A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)

✍ Fernández-Garrido, S.; Grandal, J.; Calleja, E.; Sánchez-García, M. A.; Lópe 📂 Article 📅 2009 🏛 American Institute of Physics 🌐 English ⚖ 627 KB

Low-noise GaN Schottky diodes on Si(111)

Low-noise GaN Schottky diodes on Si(111) by molecular beam epitaxy

✍ P. W. Deelman; R. N. Bicknell-tassius; S. Nikishin; V. Kuryatkov; H. Temkin 📂 Article 📅 2001 🏛 American Institute of Physics 🌐 English ⚖ 315 KB