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A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)

✍ Scribed by Fernández-Garrido, S.; Grandal, J.; Calleja, E.; Sánchez-García, M. A.; López-Romero, D.

Book ID
121712742
Publisher
American Institute of Physics
Year
2009
Tongue
English
Weight
627 KB
Volume
106
Category
Article
ISSN
0021-8979

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## Abstract We report the fabrication of GaN/AlGaN nanocolumn LEDs on n‐(111) Si substrates by RF‐MBE for the first time. Clear diode characteristics with a turn‐on voltage of 4 V and an ultraviolet emission spectrum with a peak wavelength of 354 nm were observed at room temperature. When the Al co