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Investigation of aluminium ohmic contacts to n-type GaN grown by molecular beam epitaxy

✍ Scribed by Kribes, Y; Harrison, I; Tuck, B; Kim, K S; Cheng, T S; Foxon, C T

Book ID: 115489096
Publisher: Institute of Physics
Year: 1997
Tongue: English
Weight: 317 KB
Volume: 12
Category: Article
ISSN: 0268-1242
DOI: 10.1088/0268-1242/12/11/030

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## Abstract An investigation of InN layers grown on GaN templates by molecular beam epitaxy (MBE) has been carried out by X‐ray diffraction (XRD), Raman spectroscopy (RS) and photoluminescence (PL). A good correlation is noticed between their crystalline quality and optical properties. The best sam