๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Investigation of an AlInAs/GaInAs superlattice-confined emitter bipolar transistor (SCEBT)

โœ Scribed by Po-Hung Lin; Shiou-Ying Cheng; Wen-Lung Chang; Hsi-Jen Pan; Yung-Hsin Shie; Wen-Chau Liu; Jung-Hui Tsai

Book ID
114194492
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
185 KB
Volume
57
Category
Article
ISSN
0254-0584

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Investigation of an AlInAs/GaInAs superl
Investigation of an AlInAs/GaInAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT)
โœ S.-Y. Cheng; W.-L. Chang; W.-C. Liu; W. Lin ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 118 KB

A new bipolar transistor with a 20-period i-AlInAs/n + -InGaAs superlattice, prepared by metal organic chemical vapour deposition, has been fabricated and demonstrated. This superlattice is used as a confinement barrier for holes and a resonant tunneling (RT) route for electrons. Due to the RT effec

Investigation of InP/InGaAs superlattice
Investigation of InP/InGaAs superlattice-emitter resonant tunneling bipolar transistors (RTBTs)
โœ Wei-Chou Wang; Hsi-Jen Pan; Kun-Wei Lin; Kuo-Hui Yu; Cheng-Zu Wu; Lih-Wen Laih; ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 800 KB

An InP/InGaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT) has been fabricated and demonstrated. The influence of the superlattice and emitter thickness on the device characteristics is studied. The insertion of the superlattice and a welldesigned emitter improve the characte