Investigation of InP/InGaAs superlattice
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Wei-Chou Wang; Hsi-Jen Pan; Kun-Wei Lin; Kuo-Hui Yu; Cheng-Zu Wu; Lih-Wen Laih;
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Article
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2001
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Elsevier Science
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English
β 800 KB
An InP/InGaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT) has been fabricated and demonstrated. The influence of the superlattice and emitter thickness on the device characteristics is studied. The insertion of the superlattice and a welldesigned emitter improve the characte