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Investigation of InP/InGaAs superlattice-emitter bipolar transistor with multiple negative-differential-resistance regions

✍ Scribed by Jung-Hui Tsai; Yu-Chi Kang; I-Hsuan Hsu; Tzu-Yen Weng


Book ID
113781910
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
372 KB
Volume
100
Category
Article
ISSN
0254-0584

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πŸ“œ SIMILAR VOLUMES


Investigation of InP/InGaAs superlattice
✍ Wei-Chou Wang; Hsi-Jen Pan; Kun-Wei Lin; Kuo-Hui Yu; Cheng-Zu Wu; Lih-Wen Laih; πŸ“‚ Article πŸ“… 2001 πŸ› Elsevier Science 🌐 English βš– 800 KB

An InP/InGaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT) has been fabricated and demonstrated. The influence of the superlattice and emitter thickness on the device characteristics is studied. The insertion of the superlattice and a welldesigned emitter improve the characte