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Investigation of AlGaAs/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT)

โœ Scribed by Wen-Chua Liu; Wen-Shiung Lour; Yeong-Her Wang

Book ID
114534821
Publisher
IEEE
Year
1992
Tongue
English
Weight
650 KB
Volume
39
Category
Article
ISSN
0018-9383

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๐Ÿ“œ SIMILAR VOLUMES

Investigation of an AlInAs/GaInAs superl
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An InP/InGaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT) has been fabricated and demonstrated. The influence of the superlattice and emitter thickness on the device characteristics is studied. The insertion of the superlattice and a welldesigned emitter improve the characte