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InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT)

โœ Scribed by Wen-Chau Liu, ; Shiou-Ying Cheng, ; Jung-Hui Tsai, ; Po-Hung Lin, ; Jing-Yuh Chen, ; Wei-Chou Wang,

Book ID
125534452
Publisher
IEEE
Year
1997
Tongue
English
Weight
71 KB
Volume
18
Category
Article
ISSN
0741-3106

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A superlattice-emitter resonant-tunneling bipolar transistor (SE-RTBT) has been successfully fabricated using GaAs based materials and demonstrated in this paper. In an SE-RTBT, the \(\mathrm{i}-\mathrm{Al}_{0.5} \mathrm{Ga}_{0.5} \mathrm{As} / \mathrm{n}^{+}-\mathrm{GaAs}\) superlattice is used as