𝔖 Bobbio Scriptorium
✦   LIBER   ✦

A new InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT)

✍ Scribed by Jung-Hui Tsai; Ching-Sung Lee; Wen-Shiung Lour; Yung-Chun Ma; Sheng-Shiun Ye

Book ID
111444932
Publisher
Springer
Year
2011
Tongue
English
Weight
166 KB
Volume
45
Category
Article
ISSN
1063-7826

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Investigation of an InGaP/GaAs heterostr
Investigation of an InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) with reduced potential spike
✍ Shiou-Ying Cheng πŸ“‚ Article πŸ“… 2001 πŸ› Elsevier Science 🌐 English βš– 297 KB

In this work, an improved InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) with an InGaP wide-bandgap collector is investigated. In the emitter-base region, the thin narrow bandgap n-type GaAs layer is sandwiched between a wide-bandgap N-type InGaP confinement layer and a narrow-bandgap