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Investigation of GaAs-based heterostructure–emitter bipolar transistors (HEBTs)

✍ Scribed by Wen-Chau Liu; Jung-Hui Tsai; Shiou-Ying Cheng; Wen-Lung Chang; Hsi-Jen Pan; Yung-Hsin Shie

Book ID
108389359
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
291 KB
Volume
324
Category
Article
ISSN
0040-6090

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Investigation of an InGaP/GaAs heterostr
Investigation of an InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) with reduced potential spike
✍ Shiou-Ying Cheng 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 297 KB

In this work, an improved InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) with an InGaP wide-bandgap collector is investigated. In the emitter-base region, the thin narrow bandgap n-type GaAs layer is sandwiched between a wide-bandgap N-type InGaP confinement layer and a narrow-bandgap