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Comparison of heterostructure-emitter bipolar transistors (HEBTs) with InGaAs/GaAs superlattice and quantum-well base structures

โœ Scribed by Jung-Hui Tsai; I-Hsuan Hsu; Chien-Ming Li; Ning-Xing Su; Yi-Zhen Wu; Yin-Shan Huang


Book ID
108271656
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
222 KB
Volume
52
Category
Article
ISSN
0038-1101

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Functional heterostructure-emitter bipol
โœ J.-H. Tsai; S.-Y. Cheng; H.-J. Shih; W.-C. Liu ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 139 KB

In this paper, a new functional heterostructure-emitter bipolar transistor (HEBT) with a graded Al x Ga 1-x As confinement layer and a pseudomorphic InGaAs/GaAs base structure is fabricated and demonstrated. Due to the insertion of an InGaAs quantum well (QW) between the emitter-base (E-B) junction,