✦ LIBER ✦
Materials characteristics of pseudomorphic high electron mobility transistor structures with InxGa1−xas single quantum well and GaAs-InxGa1−xas (0.25 < x < 0.4) thin strained superlattice active layers
✍ Scribed by J. M. Ballingall; Pin Ho; P. A. Martin; G. J. Tessmer; T. H. Yu; N. Lewis; E. L. Hall
- Book ID
- 112811894
- Publisher
- Springer US
- Year
- 1990
- Tongue
- English
- Weight
- 738 KB
- Volume
- 19
- Category
- Article
- ISSN
- 0361-5235
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