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Room-temperature photoreflectance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles

✍ Scribed by Lin, D. Y.; Liang, S. H.; Huang, Y. S.; Tiong, K. K.; Pollak, Fred H.; Evans, K. R.


Book ID
118171906
Publisher
American Institute of Physics
Year
1999
Tongue
English
Weight
385 KB
Volume
85
Category
Article
ISSN
0021-8979

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Using room-temperature surface photovoltage spectroscopy (SPS) we have characterized four GaAlAs=InGaAs=GaAs pseudomorphic high electron mobility transistor (pHEMT) structures with varied quantum well compositional proΓΏles fabricated by molecular beam epitaxy. Signals have been observed from every r