✦ LIBER ✦

Temperature-dependent photoreflectance and photoluminescence characterization of the subband structure and built-in electric field of GaAs/GaInAs graded-channel high electron mobility transistor structures

✍ Scribed by Ho, Ching-Hwa; Li, Jian-Shen; Lin, Yu-Shyan

Book ID: 119962830
Publisher: Institute of Physics
Year: 2009
Tongue: English
Weight: 396 KB
Volume: 24
Category: Article
ISSN: 0268-1242
DOI: 10.1088/0268-1242/24/3/035013

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Room-temperature photoreflectance and ph

Room-temperature photoreflectance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles

✍ Lin, D. Y.; Liang, S. H.; Huang, Y. S.; Tiong, K. K.; Pollak, Fred H.; Evans, K. 📂 Article 📅 1999 🏛 American Institute of Physics 🌐 English ⚖ 385 KB

Room-temperature phototransmittance and

Room-temperature phototransmittance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles

✍ Lin, D Y; Huang, Y S; Tiong, K K; Pollak, F H; Evans, K R 📂 Article 📅 1999 🏛 Institute of Physics 🌐 English ⚖ 162 KB

Temperature and electric field dependenc

Temperature and electric field dependences of the mobility of electrons in vertical transport in GaAs/Ga1−y AlyAs barrier structures containing quantum wells

✍ Altunöz, Safi ;Çelik, Hüseyin ;Cankurtaran, Mehmet 📂 Article 📅 2008 🏛 Walter de Gruyter GmbH 🌐 English ⚖ 941 KB