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Room-temperature phototransmittance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles

✍ Scribed by Lin, D Y; Huang, Y S; Tiong, K K; Pollak, F H; Evans, K R


Book ID
120992786
Publisher
Institute of Physics
Year
1999
Tongue
English
Weight
162 KB
Volume
14
Category
Article
ISSN
0268-1242

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Using room-temperature surface photovoltage spectroscopy (SPS) we have characterized four GaAlAs=InGaAs=GaAs pseudomorphic high electron mobility transistor (pHEMT) structures with varied quantum well compositional proΓΏles fabricated by molecular beam epitaxy. Signals have been observed from every r