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Surface recombination current in InGaP/GaAs heterostructure-emitter bipolar transistors

โœ Scribed by Yang, Y.F.; Hsu, C.C.; Yang, E.S.

Book ID
114535687
Publisher
IEEE
Year
1994
Tongue
English
Weight
464 KB
Volume
41
Category
Article
ISSN
0018-9383

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๐Ÿ“œ SIMILAR VOLUMES

Investigation of an InGaP/GaAs heterostr
Investigation of an InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) with reduced potential spike
โœ Shiou-Ying Cheng ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 297 KB

In this work, an improved InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) with an InGaP wide-bandgap collector is investigated. In the emitter-base region, the thin narrow bandgap n-type GaAs layer is sandwiched between a wide-bandgap N-type InGaP confinement layer and a narrow-bandgap