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Interstitial defects in silicon from 1â5 keV Si[sup +] ion implantation

✍ Scribed by Agarwal, Aditya; Haynes, Tony E.; Eaglesham, David J.; Gossmann, Hans-J.; Jacobson, Dale C.; Poate, John M.; Erokhin, Yu. E.

Book ID: 120367062
Publisher: American Institute of Physics
Year: 1997
Tongue: English
Weight: 560 KB
Volume: 70
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.119161

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