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Extended defect formation and the flux of interstitials in Si-ion implanted silicon

โœ Scribed by T.W. Simpson; I.V. Mitchell


Book ID
114168737
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
441 KB
Volume
127-128
Category
Article
ISSN
0168-583X

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A physically motivated model that accounts for the spatial and temporal evolution of extended defect distribution in ion-implanted Si is presented. Free physical parameters are extracted from experimental data and by means of a genetic algorithm (GA). Transmission electron microscopy (TEM) data and