EPR and X-ray diffraction study of damage produced by implantation of B ions (50 keV, 1 MeV) or Si ions (50 keV, 700 keV, 1.5 MeV) into silicon

✍ Scribed by L. Sealy; R.C. Barklie; G. Lulli; R. Nipoti; R. Balboni; S. Milita; M. Servidori

• Book ID: 113284914
• Publisher: Elsevier Science
• Year: 1995
• Tongue: English
• Weight: 444 KB
• Volume: 96
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/0168-583x(94)00485-4