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Defects and electrical behavior in 1 MeV Si[sup +]-ion-irradiated 4H–SiC Schottky diodes

✍ Scribed by Roccaforte, F.; Libertino, S.; Raineri, V.; Ruggiero, A.; Massimino, V.; Calcagno, L.


Book ID
120350601
Publisher
American Institute of Physics
Year
2006
Tongue
English
Weight
367 KB
Volume
99
Category
Article
ISSN
0021-8979

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