Interlayer analysis of HfO2/SiO2/Si by SIMS and HRBS
β Scribed by K. Sasakawa; K. Fujikawa; T. Toyoda
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 843 KB
- Volume
- 255
- Category
- Article
- ISSN
- 0169-4332
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π SIMILAR VOLUMES
We show that individual Hf atoms may get incorporated into the SiO 2 interlayer which is formed between the HfO 2 dielectric film and the Si substrate during rapid thermal annealing. We report atomically-resolved Z-contrast images of a Si/SiO 2 /HfO 2 structure together with first-principles calcula
Electron spin resonance (ESR) spectroscopy enables to assess on atomic scale the nature and structural aspects of interfaces and interlayers in semiconductor/insulator hetero structures. This has been applied to (1 0 0)/insulator entities with nm-thin amorphous layers of HfO 2 and LaAlO 3 of high di