Single Hf atoms inside the ultrathin SiO2 interlayer between a HfO2 dielectric film and the Si substrate: How do they modify the interface?
✍ Scribed by S.N. Rashkeev; K. van Benthem; S.T. Pantelides; S.J. Pennycook
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 363 KB
- Volume
- 80
- Category
- Article
- ISSN
- 0167-9317
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✦ Synopsis
We show that individual Hf atoms may get incorporated into the SiO 2 interlayer which is formed between the HfO 2 dielectric film and the Si substrate during rapid thermal annealing. We report atomically-resolved Z-contrast images of a Si/SiO 2 /HfO 2 structure together with first-principles calculations which demonstrate that single Hf atoms are in fact present in the interlayer. The location of individual Hf atoms within the interlayer oxide is closely related to the structure of the amorphous oxide near the Si/SiO 2 interface. The Hf defects may affect channel mobility and leakage currents in the HfO 2 /Si electronic devices.