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Analysis of the degradation of HfO2/SiO2 gate stacks using nanoscale and device level techniques

✍ Scribed by L. Aguilera; E. Amat; R. Rodríguez; M. Porti; M. Nafría; X. Aymerich

Publisher: Elsevier Science
Year: 2007
Tongue: English
Weight: 223 KB
Volume: 84
Category: Article
ISSN: 0167-9317
DOI: 10.1016/j.mee.2007.01.238

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