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Reliability and gate conduction variability of HfO2-based MOS devices: A combined nanoscale and device level study

✍ Scribed by A. Bayerl; M. Lanza; M. Porti; F. Campabadal; M. Nafría; X. Aymerich; G. Benstetter

Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 483 KB
Volume: 88
Category: Article
ISSN: 0167-9317
DOI: 10.1016/j.mee.2011.03.122

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