✦ LIBER ✦

Interfacial reactions between RF sputtered CeO2 film and Si(1 0 0) substrate

✍ Scribed by Ha-Yong Lee; Young-Cheol Lee; Young-Pyo Hong; Kyung-Hyun Ko

Publisher: Elsevier Science
Year: 2004
Tongue: English
Weight: 285 KB
Volume: 228
Category: Article
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2004.01.005

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Structural properties of Y2O3 thin films

Structural properties of Y2O3 thin films grown on Si(1 0 0) and Si(1 1 1) substrates

✍ M. Španková; I. Vávra; Š. Chromik; S. Harasek; R. Lupták; J. Šoltýs; K. Hušeková 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 250 KB

Microstructure and electrical characteri

Microstructure and electrical characteristics of Cr–Si–Ni films deposited on glass and Si (1 0 0) substrates by RF magnetron sputtering

✍ Yuqin Zhang; Xianping Dong; Jiansheng Wu 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 298 KB

Comparison of ZnO:GaN films on Si(1&#xa0

Comparison of ZnO:GaN films on Si(1 1 1) and Si(1 0 0) substrates by pulsed laser deposition

✍ N. Gopalakrishnan; B.C. Shin; H.S. Lim; G.Y. Kim; Y.S. Yu 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 241 KB

Residual strain in Ge films grown by sur

Residual strain in Ge films grown by surfactant-mediated epitaxy on Si(1 1 1) and Si(0 0 1) substrates

✍ Tobias F. Wietler; Eberhard Bugiel; Karl R. Hofmann 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 258 KB

Ion beam characterization of rf-sputter

Ion beam characterization of rf-sputter deposited AlN films on Si(1 1 1)

✍ N. Matsunami; S. Venkatachalam; M. Tazawa; H. Kakiuchida; M. Sataka 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 387 KB

Aluminum nitride (AlN) thin films have been deposited on Si(1 1 1) substrates by using reactive-rf-magnetron-sputtering at 250 °C. The crystalline quality and orientation of the films have been studied by X-ray diffraction (XRD). We have observed that the films grow with c-or a-axis orientation. The

Kinetics of epitaxial growth of Si and S

Kinetics of epitaxial growth of Si and SiGe films on (1 1 0) Si substrates

✍ N. Sugiyama; Y. Moriyama; S. Nakaharai; T. Tezuka; T. Mizuno; S. Takagi 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 233 KB

Interfacial reactions between RF sputtered CeO2 film and Si(1&#xa0;0&#xa0;0) substrate

Interfacial reactions between RF sputtered CeO2 film and Si(1 0 0) substrate