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Ion beam characterization of rf-sputter deposited AlN films on Si(1 1 1)

✍ Scribed by N. Matsunami; S. Venkatachalam; M. Tazawa; H. Kakiuchida; M. Sataka

Publisher: Elsevier Science
Year: 2008
Tongue: English
Weight: 387 KB
Volume: 266
Category: Article
ISSN: 0168-583X
DOI: 10.1016/j.nimb.2007.12.086

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✦ Synopsis

Aluminum nitride (AlN) thin films have been deposited on Si(1 1 1) substrates by using reactive-rf-magnetron-sputtering at 250 °C. The crystalline quality and orientation of the films have been studied by X-ray diffraction (XRD). We have observed that the films grow with c-or a-axis orientation. The composition, film thickness, impurities and stress are considered to be factors affecting the orientation and have been analyzed by Rutherford backscattering spectroscopy (RBS), nuclear reaction analysis (NRA) and XRD. Their effects on the film growth will be discussed. Surface morphology of the films will be also presented.

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Ion beam characterization of rf-sputter deposited AlN films on Si(1&#xa0;1&#xa0;1)

✦ Synopsis

Ion beam characterization of rf-sputter deposited AlN films on Si(1 1 1)