𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Interface trap generation by FN injection under dynamic oxide field stress

✍ Scribed by Chen, T.P.; Stella Li; Fung, S.; Lo, K.F.

Book ID
114537418
Publisher
IEEE
Year
1998
Tongue
English
Weight
166 KB
Volume
45
Category
Article
ISSN
0018-9383

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Oxide thickness dependence of hole trap
Oxide thickness dependence of hole trap generation in MOS structures under high-field electron injection
✍ Tomasz BroΕΌek; Eric B. Lum; Chand R. Viswanathan πŸ“‚ Article πŸ“… 1997 πŸ› Elsevier Science 🌐 English βš– 291 KB

Hole trapping in the gate oxide of MOS devices causes instabilities of device parameters and serious reliability problems in MOS transistors and memories. In this work, hole traps, generated by high-field electron injection, are studied in thermal oxides in the thickness range below 10 nm. PMOS tran