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Charge trap generation in LPCVD oxides under high field stressing

✍ Scribed by Bhat, N.; Apte, P.P.; Saraswat, K.C.


Book ID
114536424
Publisher
IEEE
Year
1996
Tongue
English
Weight
712 KB
Volume
43
Category
Article
ISSN
0018-9383

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Hole trapping in the gate oxide of MOS devices causes instabilities of device parameters and serious reliability problems in MOS transistors and memories. In this work, hole traps, generated by high-field electron injection, are studied in thermal oxides in the thickness range below 10 nm. PMOS tran