Oxide thickness dependence of hole trap generation in MOS structures under high-field electron injection
✍ Scribed by Tomasz Brożek; Eric B. Lum; Chand R. Viswanathan
- Publisher
- Elsevier Science
- Year
- 1997
- Tongue
- English
- Weight
- 291 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0167-9317
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✦ Synopsis
Hole trapping in the gate oxide of MOS devices causes instabilities of device parameters and serious reliability problems in MOS transistors and memories. In this work, hole traps, generated by high-field electron injection, are studied in thermal oxides in the thickness range below 10 nm. PMOS transistors, after various doses of positive and negative F-N injection and post-stress annealing are subjected to substrate hot hole injection to investigate hole trapping kinetics. Parameters of hole traps, generated under the stress, are studied as a function of gate oxide thickness and stress dose.