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The charging and discharging of high-voltage stress-generated traps in thin silicon oxide

โœ Scribed by Scott, R.S.; Dumin, D.J.


Book ID
114536357
Publisher
IEEE
Year
1996
Tongue
English
Weight
842 KB
Volume
43
Category
Article
ISSN
0018-9383

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In this work, we give some insights on the charging and discharging properties of electron traps created in gate oxide by homogeneous electron injection with the aim at further relating them to breakdown. We present a new procedure for determining the electrical properties of these traps. A model ba