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New insights on the charging and discharging of electron traps created by homogeneous electron injection in gate oxide

✍ Scribed by G. Auriel; J.P. Dubuc; B. Sagnes; J. Oualid; D. Vuillaume

Publisher: Elsevier Science
Year: 1997
Tongue: English
Weight: 321 KB
Volume: 36
Category: Article
ISSN: 0167-9317
DOI: 10.1016/s0167-9317(97)00070-1

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✦ Synopsis

In this work, we give some insights on the charging and discharging properties of electron traps created in gate oxide by homogeneous electron injection with the aim at further relating them to breakdown. We present a new procedure for determining the electrical properties of these traps. A model based on trap to band tunneling gives an estimation of their energy levels in the oxide gap.

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