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Interface structure of microcrystalline silicon deposited by inductive coupled plasma using internal low inductance antenna

✍ Scribed by H. Kaki; A. Tomyo; E. Takahashi; T. Hayashi; K. Ogata; A. Ebe; K. Takenaka; Y. Setsuhara

Book ID
104094331
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
777 KB
Volume
202
Category
Article
ISSN
0257-8972

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✦ Synopsis

Hydrogenated microcrystalline silicon (Β΅c-Si:H) films were prepared by inductive coupled plasma chemical vapor deposition (ICP-CVD) system using internal low inductance antenna (LIA) units on various under layer composed of Si, O, and N. The resultant changes in the crystallinity of the Β΅c-Si:H films were investigated using Raman scattering spectroscopy and the details of the interface structure were observed by high resolution transmission electron microscope. We had found that Β΅c-Si:H film on the SiN x layer treated by O 2 plasma has good interface quality. The highly crystallized Β΅c-Si:H films with no amorphous incubation layer at interface of Si/SiN x could be directly deposited on the SiN x layer.

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