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Large-Area and High-Speed Deposition of Microcrystalline Silicon Film by Inductive Coupled Plasma using Internal Low-Inductance Antenna

✍ Scribed by Takahashi, Eiji; Nishigami, Yasuaki; Tomyo, Atsushi; Fujiwara, Masaki; Kaki, Hirokazu; Kubota, Kiyoshi; Hayashi, Tsukasa; Ogata, Kiyoshi; Ebe, Akinori; Setsuhara, Yuichi


Book ID
127216966
Publisher
Institute of Pure and Applied Physics
Year
2007
Tongue
English
Weight
266 KB
Volume
46
Category
Article
ISSN
0021-4922

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Interface structure of microcrystalline
✍ H. Kaki; A. Tomyo; E. Takahashi; T. Hayashi; K. Ogata; A. Ebe; K. Takenaka; Y. S πŸ“‚ Article πŸ“… 2008 πŸ› Elsevier Science 🌐 English βš– 777 KB

Hydrogenated microcrystalline silicon (Β΅c-Si:H) films were prepared by inductive coupled plasma chemical vapor deposition (ICP-CVD) system using internal low inductance antenna (LIA) units on various under layer composed of Si, O, and N. The resultant changes in the crystallinity of the Β΅c-Si:H film