High rate deposition of microcrystalline silicon films using jet-type inductively coupled plasma chemical vapor deposition
โ Scribed by Zewen Zuo; Yu Wang; Jin Lu; Junzhuan Wang; Lin Pu; Yi Shi; Youdou Zheng
- Book ID
- 113940810
- Publisher
- Elsevier Science
- Year
- 2012
- Tongue
- English
- Weight
- 967 KB
- Volume
- 86
- Category
- Article
- ISSN
- 0042-207X
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๐ SIMILAR VOLUMES
Thin silicon nitride films were prepared at 350 ยฐC by inductively coupled plasma chemical vapor deposition on Si(100) substrates under different NH 3 /SiH 4 or N 2 /SiH 4 gas mixture. The chemical composition and bonding structure of the deposited films were investigated as a function of the process
Using an internal inductively coupled plasma (ICP)-type-plasma enhanced vapor deposition system, microcrystalline silicon thin films were deposited as a function of H 2 /SiH 4 gas ratio at 180 ยฐC. Especially, the effects of deposition with/without an initial thin silicon layer formed with a very hig