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High-density inductively coupled plasma chemical vapor deposition of silicon nitride for solar cell application

โœ Scribed by I.O Parm; K Kim; D.G Lim; J.H Lee; J.H Heo; J Kim; D.S Kim; S.H Lee; J Yi


Book ID
108472353
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
249 KB
Volume
74
Category
Article
ISSN
0927-0248

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Chemical bonding and composition of sili
โœ M. Matsuoka; S. Isotani; W. Sucasaire; L.S. Zambom; K. Ogata ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 560 KB

Thin silicon nitride films were prepared at 350 ยฐC by inductively coupled plasma chemical vapor deposition on Si(100) substrates under different NH 3 /SiH 4 or N 2 /SiH 4 gas mixture. The chemical composition and bonding structure of the deposited films were investigated as a function of the process