## Abstract We report on the fabrication of germanium quantum dots on silicon oxide and their growth mechanism. Germanium quantum dots were deposited by inductivelyβcoupled plasma CVD at 400βΒ°C. Gold nanoparticles, attached to silicon oxide through a selfβassembled monolayer, were adopted as cataly
β¦ LIBER β¦
Low temperature deposition of tin oxide films by inductively coupled plasma assisted chemical vapor deposition
β Scribed by H.Y. Lee; J.N. Kim; Hun Kim; D.S. Jang; J.J. Lee
- Book ID
- 108289899
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 654 KB
- Volume
- 516
- Category
- Article
- ISSN
- 0040-6090
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