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N+ plasma-assisted wafer bonding between silicon and chemical vapor deposition oxide at low temperature

✍ Scribed by Xiaobo Ma; Weili Liu; Chao Chen; Jiayi Xu; Zhitang Song; Chenglu Lin


Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
567 KB
Volume
12
Category
Article
ISSN
1369-8001

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## Abstract We report on the fabrication of germanium quantum dots on silicon oxide and their growth mechanism. Germanium quantum dots were deposited by inductively‐coupled plasma CVD at 400 °C. Gold nanoparticles, attached to silicon oxide through a self‐assembled monolayer, were adopted as cataly