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Pitting resistance of TiN deposited on Inconel 600 by plasma-assisted chemical vapor deposition

โœ Scribed by C.B. In; S.P. Kim; Y.I. Kim; W.W. Kim; I.H. Kuk; S.S Chun; W.J. Lee


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
833 KB
Volume
211
Category
Article
ISSN
0022-3115

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We have investi ated the effects of reactant residence time on the properties of microwav+a88isted CV % diamond films. Using a constant process pressure of 40 Torr and gas composition of 1% CHb in Hr? the total gas flow rate was adjusted from 25 to 800 seem. For OUT reactor, this correspond8 to res